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    亚稳材料论坛第203期:Atomic point defects and interfaces in 2D materials

    作者:李英梅 发布时间:2018-05-29 15:01:53

    报告题目:Atomic point defects and interfaces in 2D materials

    人:陶成钢教授,Department of Physics, Virginia Tech

    间:2018531(星期四)上午1000

    点:材料馆A323

    Biography:

    Dr. Chenggang Tao is from the Department of Physics at Virginia Tech. Hereceived his PhD from the University of Maryland under Prof. Ellen Williams,and then worked in Prof. Mike Crommie’s Group at the University of Californiaat Berkeley as a postdoc. Dr. Tao’s current research mainly focuses on emerging2D materials, energy related materials and surface science, with funding fromthe US Army Research Office. He has published a number of papers on 2Dmaterials and surface dynamics in leading journals, including Science, NaturePhysics, PRL, JACS and Nano Lett.

    Abstract:

    Emerging 2D materials, such as atomically thin transition metaldichalcogenides (TMDs) and graphene, have been intensely studied due to theirintriguing physical and chemical properties. These properties are usuallygoverned by atomic point defects and interfaces in 2D materials, includingedges and domain boundaries. Investigation of the defect and interfacestructures, therefore, is essential for rational design and optimization of 2Dmaterials. In this talk, I will present our recent scanning tunnelingmicroscopy and spectroscopy studies of atomic point defects and interfaces in2D TMDs, focusing on those in few-layer PtSe2 and MoS2/WS2 heterostructures. Iwill further discuss the impacts of external stimuli on defects and interfaces.Particularly, I will show our findings on the shape evolution of monolayervacancy islands on TiSe2 surfaces, and the associated growth kinetics, underelectrical stressing.