报告题目：Pointdefects and interfaces in 2D materials
报告人：ChenggangTao博士
Virginia Tech
时间：2017年7月14日（星期五）10:00
地点：材料馆A323
报告摘要：
Emerging 2D materials, such as atomically thintransition metal dichalcogenides (TMDs) and graphene, have been the subject ofintense research, due to their intriguing electronic and optical behaviors.Atomic point defects and interfaces in 2D materials, including domainboundaries and edges, usually govern physical and chemical properties of thematerials, and hence performance of devices based on them. To design andoptimize 2D materials rationally, it is essential to investigate the pointdefects and interfaces at the atomic scale, the knowledge of which is yetlacking.
In this talk, Dr. Chenggang Tao will present theirrecent scanning tunneling microscopy (STM) and spectroscopy (STS)investigations of point defects in 2D TMDs. They observed an interface betweenthe MoS2 monolayer and the MoS2/WS2 heterobilayer with atomic resolution. TheirSTS results and density functional theory (DFT) calculations reveal theelectronic structures of monolayer and heterobilayer. He will further discusshow the defects and interfaces are affected by external stimuli. Usingmonolayer vacancy islands on TiSe2 surfaces under electrical stress as a modelsystem, they experimentally and theoretically investigated the shape evolutionand demonstrated dependence of the growth rate on the tunneling current.
个人简介：
Dr. Chenggang Tao is an assistant professor in the Department of Physicsat Virginia Tech. He received his PhD from the University of Maryland and thenmoved to the University of California at Berkeley as a postdoctoral researcher.His current research mainly focuses on emerging 2D materials and surfacedynamics. He has published a number of papers on 2D materials, including papersin Science, Nature Physics, PRL and PNAS. In his spare time, Chenggang enjoysplaying tennis.
